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SIDELED(R) Super-Bright, Hyper-Red GaAIAs-LED
LH A674
Besondere Merkmale
q q q q q q q q
Features
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color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and reflow soldering methods available taped on reel (12 mm tape) load dump resistant acc. to DIN 40839
Typ
Type
Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area colorless clear
Lichtstarke
Lichtstrom
Bestellnummer
Luminous Intensity IF = 10 mA IV (mcd) 6.3 10.0 16.0 10.0 ... ... ... ... 32 20 32 50
Luminous Flux IF = 10 mA V (mlm) 45 (typ.) 75 (typ.) -
Ordering code
LH A674-KM hyper-red LH A674-L LH A674-M LH A674-LN
Q62703-Q2546 Q62703-Q2830 Q62703-Q2831 Q62703-Q2832
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
1
1998-11-12
VPL06880
Gehausefarbe: wei Doppel-Heterostruktur in GaAlAs Technologie besonders hohe Lichtstarke als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Reflow-Lottechniken geeignet gegurtet (12-mm-Filmgurt) Storimpulsfest nach DIN 40839
LH A674
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Montage auf PC-Board*) (Padgroe je 16 mm2) mounted on PC-Board*) (pad size 16 mm2 each) *) PC-board: FR4 Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 30 0.5 Einheit Unit C C C mA A
Top Tstg Tj IF IFM
VR Ptot
3 90
V mW
Rth JA
430
K/W
Semiconductor Group
2
1998-11-12
LH A674
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 3 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 s, RL = 50 Symbol Symbol (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 Werte Values 660 Einheit Unit nm
645
nm
22
nm
120 1.75 2.6 0.01 10 25
Grad deg. V V A A pF
(typ.) tr (typ.) tf
140 110
ns ns
Semiconductor Group
3
1998-11-12
LH A674
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve
100 % rel 80
OHL01698
V
60
pure-green green
orange
super-red
red
20
0 400
450
500
550
yellow
40
600
650
hyper-red
blue
nm
700
Abstrahlcharakteristik Irel = f () Radiation characteristic
40 30 20 10 0
OHL01660
1.0
50
0.8
0.6 60 0.4 70 0.2 80 90 100 10 08 06 04 0 20 40 60 80 100 120 0
Semiconductor Group
4
1998-11-12
LH A674
Durchlastrom IF = f (VF) Forward current TA = 25 C
Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C
Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C
10 3
OHL01686
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
F
mA
tP D=
tP
T T
F
F
60 mA 50
OHL01661
D = 0.005 0.01 0.02 0.05 0.1
10 2 0.2
40
30
5
0.5 DC
20
10
10 1 -5 10
10 -4
10 -3
10 -2
10 -1
10 0 s 10 1 tp
0
0
20
40
60
80 C 100 TA
Semiconductor Group
5
1998-11-12
LH A674
Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 10 mA
Dominantwellenlange dom = f (TA) Dominant wavelength IF = 10 mA
Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA
Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA
Semiconductor Group
6
1998-11-12
LH A674
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
(2.4)
2.8 2.4
4.2 3.8 0.7
Cathode Cathode marking
2.54 spacing (1.4)
1.1 0.9 Anode
(0.3)
(2.85)
(2.9)
(R1)
3.8 3.4
4.2 3.8
Kathodenkennzeichnung: Cathode mark:
abgeschragte Ecke bevelled edge
Semiconductor Group
7
1998-11-12
GPL06880

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